High Performance InAlN/GaN HEMTs on SiC Substrate
نویسندگان
چکیده
In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance.
منابع مشابه
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation
We studied submicrometer (LG = 0.15−0.25 μm) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of IDS,max = 1.5 A/mm and a record peak extrinsic transcond...
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